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BSS8402DW-7-F, Diodes Incorporated

BSS8402DW-7-F Diodes Incorporated
BSS8402DW-7-F
BSS8402DW-7-F
ET20133227
Diodes Incorporated

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
BSS8402DW
Detailed Description:
Mosfet Array N and P-Channel 60V, 50V 115mA, 130mA 200mW Surface Mount SOT-363
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Part Status:
Active
Drain to Source Voltage (Vdss):
60V, 50V
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
7.5Ohm @ 50mA, 5V
Supplier Device Package:
SOT-363
Manufacturer Standard Lead Time:
13 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Power - Max:
200mW
Current - Continuous Drain (Id) @ 25°C:
115mA, 130mA
Manufacturer:
Diodes Incorporated
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This is manufactured by Diodes Incorporated. The manufacturer part number is BSS8402DW-7-F. The FET features of the product include logic level gate. Base Part Number: bss8402dw. It features mosfet array n and p-channel 60v, 50v 115ma, 130ma 200mw surface mount sot-363. The product's input capacitance at maximum includes 50pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. Furthermore, the product is active The product has a 60v, 50v drain to source voltage. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 7.5ohm @ 50ma, 5v. sot-363 is the supplier device package value. It has typical 13 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 200mw. The continuous current drain at 25°C is 115ma, 130ma. The diodes incorporated's product offers user-desired applications.

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Multiple Device Changes 29/Apr/2013(PCN Other)
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Mult Dev Wafer Chgs 4/Oct/2019(PCN Assembly/Origin)
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BSS8402DW Datasheet(Datasheets)
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Bond Wire 3/May/2011(PCN Design/Specification)
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Green Encapsulate Change 09/July/2007(PCN Design/Specification)
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Diodes RoHS 3 Cert(Environmental Information)

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