SI6913DQ-T1-GE3, Vishay Siliconix
Product Information
FET Feature:
Logic Level Gate
Base Part Number:
SI6913
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 12V 4.9A 830mW Surface Mount 8-TSSOP
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
900mV @ 400µA
Part Status:
Active
Series:
TrenchFET®
Package / Case:
8-TSSOP (0.173", 4.40mm Width)
Rds On (Max) @ Id, Vgs:
21mOhm @ 5.8A, 4.5V
Supplier Device Package:
8-TSSOP
Manufacturer Standard Lead Time:
14 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Power - Max:
830mW
Drain to Source Voltage (Vdss):
12V
Current - Continuous Drain (Id) @ 25°C:
4.9A
Manufacturer:
Vishay Siliconix
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI6913DQ-T1-GE3. The FET features of the product include logic level gate. Base Part Number: si6913. It features mosfet array 2 p-channel (dual) 12v 4.9a 830mw surface mount 8-tssop. The maximum gate charge and given voltages include 28nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 900mv @ 400µa. Furthermore, the product is active The product trenchfet®, is a highly preferred choice for users. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 21mohm @ 5.8a, 4.5v. 8-tssop is the supplier device package value. It has typical 14 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 830mw. The product has a 12v drain to source voltage. The continuous current drain at 25°C is 4.9a. The vishay siliconix's product offers user-desired applications.
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