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BFP840ESDH6327XTSA1, Infineon

BFP840ESDH6327XTSA1 Infineon  NPN SiGe Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343
BFP840ESDH6327XTSA1
Infineon

Product Information

Minimum DC Current Gain:
150
Transistor Type:
NPN
Dimensions:
2 x 1.25 x 0.8mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
75 mW
Maximum Collector Base Voltage:
2.9 V
Maximum Collector Emitter Voltage:
2.25 V
Maximum Operating Frequency:
80 GHz
Height:
0.8mm
Width:
1.25mm
Length:
2mm
Package Type:
SOT-343
Number of Elements per Chip:
1
Maximum DC Collector Current:
35 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
RoHs Compliant
Checking for live stock

This is NPN SiGe Bipolar Transistor 35 mA 2.25 V 4-Pin SOT-343 manufactured by Infineon. The manufacturer part number is BFP840ESDH6327XTSA1. The transistor is a npn type. The given dimensions of the product include 2 x 1.25 x 0.8mm. The product is available in surface mount configuration. In addition, the height is 0.8mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2mm. It has a maximum operating temperature of +150 °c.

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You can order Infineon brand products like Infineon BFP840ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343 directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
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Yes. Our products in BJT & Bipolar Transistors category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon BFP840ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343. You can also check on our website or by contacting our customer support team for further order details on Infineon BFP840ESDH6327XTSA1 NPN SiGe Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343.
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