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BSC014NE2LSIATMA1, Infineon Technologies

BSC014NE2LSIATMA1 Infineon Technologies
Infineon Technologies

Product Information

Manufacturer Standard Lead Time:
26 Weeks
Rds On (Max) @ Id, Vgs:
1.4mOhm @ 30A, 10V
Detailed Description:
N-Channel 25V 33A (Ta), 100A (Tc) 2.5W (Ta), 74W (Tc) Surface Mount PG-TDSON-8-7
Input Capacitance (Ciss) (Max) @ Vds:
2700pF @ 12V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Part Status:
Active
Series:
OptiMOS™
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
39nC @ 10V
Supplier Device Package:
PG-TDSON-8-7
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
8-PowerTDFN
Power Dissipation (Max):
2.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
33A (Ta), 100A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Infineon Technologies
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This is manufactured by Infineon Technologies. The manufacturer part number is BSC014NE2LSIATMA1. It has typical 26 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 1.4mohm @ 30a, 10v. It features n-channel 25v 33a (ta), 100a (tc) 2.5w (ta), 74w (tc) surface mount pg-tdson-8-7. The product's input capacitance at maximum includes 2700pf @ 12v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. Furthermore, the product is active The product optimos™, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 39nc @ 10v. pg-tdson-8-7 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 2.5w (ta), 74w (tc). The product has a 25v drain to source voltage. The continuous current drain at 25°C is 33a (ta), 100a (tc). This product use mosfet (metal oxide) technology. The infineon technologies's product offers user-desired applications.

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Mult Dev Assembly Site Add 24/Jun/2019(PCN Assembly/Origin)
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OptiMOS Wafer Addition 17/Dec/2015(PCN Design/Specification)
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Mult Dev Reel Design Chg 2/Dec/2019(PCN Packaging)
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Mult Dev Pkg Box Chg 3/Jan/2018(PCN Packaging)
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Part Number Guide(Other Related Documents)

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FAQs

Yes. We ship Infineon Technologies BSC014NE2LSIATMA1 Internationally to many countries around the world.
You can order Infineon Technologies brand products like Infineon Technologies BSC014NE2LSIATMA1 directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
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We accept all major payment methods for all products including ET20133225. Please check your shopping cart at the time of order.
Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Infineon Technologies BSC014NE2LSIATMA1. You can also check on our website or by contacting our customer support team for further order details on Infineon Technologies BSC014NE2LSIATMA1.
We use our internationally recognized delivery partners UPS/DHL. Collection of Infineon Technologies BSC014NE2LSIATMA1 can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "Infineon Technologies" products or by using our unique Enrgtech manufacturing part number ET20133225.