FDV301N, ON Semiconductor
Product Information
Manufacturer Standard Lead Time:
10 Weeks
Rds On (Max) @ Id, Vgs:
4Ohm @ 400mA, 4.5V
Detailed Description:
N-Channel 25V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23
Input Capacitance (Ciss) (Max) @ Vds:
9.5pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.06V @ 250µA
Part Status:
Active
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
0.7nC @ 4.5V
Supplier Device Package:
SOT-23
Drive Voltage (Max Rds On, Min Rds On):
2.7V, 4.5V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
350mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
220mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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Yes. We ship ON Semiconductor FDV301N Internationally to many countries around the world.
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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This is manufactured by ON Semiconductor. The manufacturer part number is FDV301N. It has typical 10 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 4ohm @ 400ma, 4.5v. It features n-channel 25v 220ma (ta) 350mw (ta) surface mount sot-23. The product's input capacitance at maximum includes 9.5pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.06v @ 250µa. Furthermore, the product is active The product has a 25v drain to source voltage. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 0.7nc @ 4.5v. sot-23 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 350mw (ta). The continuous current drain at 25°C is 220ma (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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