NTMFS4833NT1G, ON Semiconductor
Product Information
Manufacturer Standard Lead Time:
11 Weeks
Base Part Number:
NTMFS4
Detailed Description:
N-Channel 30V 16A (Ta), 156A (Tc) 910mW (Ta), 125W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Input Capacitance (Ciss) (Max) @ Vds:
5600pF @ 12V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Part Status:
Active
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
88nC @ 11.5V
Rds On (Max) @ Id, Vgs:
2mOhm @ 30A, 10V
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
8-PowerTDFN, 5 Leads
Power Dissipation (Max):
910mW (Ta), 125W (Tc)
Current - Continuous Drain (Id) @ 25°C:
16A (Ta), 156A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMFS4833NT1G. It has typical 11 weeks of manufacturer standard lead time. Base Part Number: ntmfs4. It features n-channel 30v 16a (ta), 156a (tc) 910mw (ta), 125w (tc) surface mount 5-dfn (5x6) (8-sofl). The product's input capacitance at maximum includes 5600pf @ 12v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. Furthermore, the product is active The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 88nc @ 11.5v. It has a maximum Rds On and voltage of 2mohm @ 30a, 10v. 5-dfn (5x6) (8-sofl) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 910mw (ta), 125w (tc). The continuous current drain at 25°C is 16a (ta), 156a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.
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