RSR030N06TL, Rohm Semiconductor
Product Information
Rds On (Max) @ Id, Vgs:
85mOhm @ 3A, 10V
Detailed Description:
N-Channel 60V 3A (Ta) 540mW (Ta) Surface Mount TSMT3
Input Capacitance (Ciss) (Max) @ Vds:
380pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Part Status:
Not For New Designs
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Supplier Device Package:
TSMT3
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Package / Case:
SC-96
Power Dissipation (Max):
540mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is RSR030N06TL. It has a maximum Rds On and voltage of 85mohm @ 3a, 10v. It features n-channel 60v 3a (ta) 540mw (ta) surface mount tsmt3. The product's input capacitance at maximum includes 380pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. Furthermore, the product is not for new designs The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. tsmt3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 540mw (ta). The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. The rohm semiconductor's product offers user-desired applications.
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