SSM3K361R,LF, Toshiba Semiconductor and Storage
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Rds On (Max) @ Id, Vgs:
69mOhm @ 2A, 10V
Detailed Description:
N-Channel 100V 3.5A (Ta) 1.2W (Ta) Surface Mount SOT-23F
Input Capacitance (Ciss) (Max) @ Vds:
430pF @ 15V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 100µA
Part Status:
Active
Series:
U-MOSVIII-H
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
3.2nC @ 4.5V
Supplier Device Package:
SOT-23F
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
175°C
FET Type:
N-Channel
Package / Case:
SOT-23-3 Flat Leads
Power Dissipation (Max):
1.2W (Ta)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K361R,LF. It has typical 12 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 69mohm @ 2a, 10v. It features n-channel 100v 3.5a (ta) 1.2w (ta) surface mount sot-23f. The product's input capacitance at maximum includes 430pf @ 15v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 100µa. Furthermore, the product is active The product u-mosviii-h, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 3.2nc @ 4.5v. sot-23f is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 175°c operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 1.2w (ta). The product has a 100v drain to source voltage. The continuous current drain at 25°C is 3.5a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.
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