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RN1905FE,LF(CB, Toshiba Semiconductor and Storage

RN1905FE-LF-CB Toshiba Semiconductor and Storage RN1905FE,LF(CB
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Resistor - Base (R1):
2.2 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Current - Collector (Ic) (Max):
100mA
Part Status:
Active
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
250MHz
Voltage - Collector Emitter Breakdown (Max):
50V
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Supplier Device Package:
ES6
Packaging:
Cut Tape (CT)
Power - Max:
100mW
Other Names:
RN1905FE(TE85LF)CT RN1905FE(TE85LF)CT-ND RN1905FELF(CBCT RN1905FELF(CTCT RN1905FELF(CTCT-ND
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1905FE,LF(CB. It has typical 16 weeks of manufacturer standard lead time. Resistor - Base - 2.2 kohms. It features pre-biased bipolar transistor (bjt) 2 npn - pre-biased (dual) 50v 100ma 250mhz 100mw surface mount es6. The maximum collector current includes 100ma. Furthermore, the product is active Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in [Package/ Case]. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250mhz. The maximum collector emitter breakdown voltage of the product is 50v. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 2 npn - pre-biased (dual) type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. es6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100mw. Alternative Names include rn1905fe(te85lf)ct rn1905fe(te85lf)ct-nd rn1905felf(cbct rn1905felf(ctct rn1905felf(ctct-nd.

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FAQs

Yes. We ship Toshiba Semiconductor and Storage RN1905FE,LF(CB Internationally to many countries around the world.
You can order Toshiba Semiconductor and Storage brand products like Toshiba Semiconductor and Storage RN1905FE,LF(CB directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
Yes. You can also search RN1905FE,LF(CB on website for other similar products.
We accept all major payment methods for all products including ET12012592. Please check your shopping cart at the time of order.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage RN1905FE,LF(CB. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage RN1905FE,LF(CB.
We use our internationally recognized delivery partners UPS/DHL. Collection of Toshiba Semiconductor and Storage RN1905FE,LF(CB can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "Toshiba Semiconductor and Storage" products or by using our unique Enrgtech manufacturing part number ET12012592.