HN2C01FEYTE85LF, Toshiba Semiconductor and Storage
Product Information
Current - Collector (Ic) (Max):
150mA
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 60MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 2mA, 6V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
60MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Part Status:
Obsolete
Standard Package:
1
Supplier Device Package:
ES6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
100mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
SOT-563, SOT-666
Current - Collector Cutoff (Max):
100nA (ICBO)
Other Names:
HN2C01FEYTE85LFCT
Manufacturer:
Toshiba Semiconductor and Storage
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FAQs
Yes. We ship Toshiba Semiconductor and Storage HN2C01FEYTE85LF Internationally to many countries around the world.
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN2C01FEYTE85LF. The maximum collector current includes 150ma. It features bipolar (bjt) transistor array 2 npn (dual) 50v 150ma 60mhz 100mw surface mount es6. Furthermore, 120 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 60mhz. The product is available in surface mount configuration. The 250mv @ 10ma, 100ma is the maximum Vce saturation. Furthermore, the product is obsolete It is available in the standard package of 1. es6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include hn2c01feyte85lfct. The toshiba semiconductor and storage's product offers user-desired applications.
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