HN4B01JE(TE85L,F), Toshiba Semiconductor and Storage
Product Information
Current - Collector (Ic) (Max):
150mA
Detailed Description:
Bipolar (BJT) Transistor Array NPN, PNP (Emitter Coupled) 50V 150mA 80MHz 100mW Surface Mount ESV
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 10MA, 100MA
Transistor Type:
NPN, PNP (Emitter Coupled)
Frequency - Transition:
80MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Part Status:
Discontinued at Digi-Key
Standard Package:
1
Supplier Device Package:
ESV
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
100mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
SOT-553
Current - Collector Cutoff (Max):
100nA (ICBO)
Other Names:
HN4B01JE(TE85LF)CT
Manufacturer:
Toshiba Semiconductor and Storage
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FAQs
Yes. We ship Toshiba Semiconductor and Storage HN4B01JE(TE85L,F) Internationally to many countries around the world.
You can order Toshiba Semiconductor and Storage brand products like Toshiba Semiconductor and Storage HN4B01JE(TE85L,F) directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of Toshiba Semiconductor and Storage HN4B01JE(TE85L,F) can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "Toshiba Semiconductor and Storage" products or by using our unique Enrgtech manufacturing part number ET11296933.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN4B01JE(TE85L,F). The maximum collector current includes 150ma. It features bipolar (bjt) transistor array npn, pnp (emitter coupled) 50v 150ma 80mhz 100mw surface mount esv. Furthermore, 120 @ 10ma, 100ma is the minimum DC current gain at given voltage. The transistor is a npn, pnp (emitter coupled) type. The transition frequency of the product is 80mhz. The product is available in surface mount configuration. The 250mv @ 10ma, 100ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. esv is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include hn4b01je(te85lf)ct. The toshiba semiconductor and storage's product offers user-desired applications.
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