SG2013J-883B, Microsemi Corporation
Product Information
Current - Collector (Ic) (Max):
600mA
Detailed Description:
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 600mA Through Hole 16-CDIP
Transistor Type:
7 NPN Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.9V @ 600µA, 500mA
Part Status:
Active
Supplier Device Package:
16-CDIP
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Standard Package:
100
DC Current Gain (hFE) (Min) @ Ic, Vce:
900 @ 500mA, 2V
Other Names:
1259-1108
1259-1108-MIL
Manufacturer:
Microsemi Corporation
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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This is manufactured by Microsemi Corporation. The manufacturer part number is SG2013J-883B. The maximum collector current includes 600ma. It features bipolar (bjt) transistor array 7 npn darlington 50v 600ma through hole 16-cdip. The transistor is a 7 npn darlington type. The product is available in through hole configuration. The 1.9v @ 600µa, 500ma is the maximum Vce saturation. Furthermore, the product is active 16-cdip is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. Its typical moisture sensitivity level is 1 (unlimited). It is available in the standard package of 100. Furthermore, 900 @ 500ma, 2v is the minimum DC current gain at given voltage. Alternative Names include 1259-1108 1259-1108-mil. The microsemi corporation's product offers user-desired applications.
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