MJL21196G, ON Semiconductor
Product Information
Manufacturer Standard Lead Time:
11 Weeks
Current - Collector (Ic) (Max):
16A
Detailed Description:
Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Through Hole TO-264
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 8A, 5V
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 3.2A, 16A
Part Status:
Active
Standard Package:
25
Supplier Device Package:
TO-264
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
200W
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-264-3, TO-264AA
Current - Collector Cutoff (Max):
100µA
Other Names:
MJL21196GOS
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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This is manufactured by ON Semiconductor. The manufacturer part number is MJL21196G. It has typical 11 weeks of manufacturer standard lead time. The maximum collector current includes 16a. It features bipolar (bjt) transistor npn 250v 16a 4mhz 200w through hole to-264. Furthermore, 25 @ 8a, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 4mhz. The product is available in through hole configuration. The 4v @ 3.2a, 16a is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 25. to-264 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 250v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 200w. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100µa is the maximum current at collector cutoff. Alternative Names include mjl21196gos. The on semiconductor's product offers user-desired applications.
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