SI4210DY-T1-GE3, Vishay Siliconix
Product Information
FET Feature:
Logic Level Gate
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 6.5A 2.7W Surface Mount 8-SO
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25°C:
6.5A
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Rds On (Max) @ Id, Vgs:
35.5 mOhm @ 5A, 10V
FET Type:
2 N-Channel (Dual)
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
445pF @ 15V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SO
Packaging:
Cut Tape (CT)
Power - Max:
2.7W
Other Names:
SI4210DY-T1-GE3CT
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FAQs
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI4210DY-T1-GE3. The FET features of the product include logic level gate. It features mosfet array 2 n-channel (dual) 30v 6.5a 2.7w surface mount 8-so. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The continuous current drain at 25°C is 6.5a. The maximum gate charge and given voltages include 12nc @ 10v. It has a maximum Rds On and voltage of 35.5 mohm @ 5a, 10v. It carries FET type 2 n-channel (dual). It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 445pf @ 15v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 8-so is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 2.7w. Alternative Names include si4210dy-t1-ge3ct.
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