SI5515DC-T1-E3, Vishay Siliconix
Product Information
FET Feature:
Logic Level Gate
Detailed Description:
Mosfet Array N and P-Channel 20V 4.4A, 3A 1.1W Surface Mount 1206-8 ChipFET™
Vgs(th) (Max) @ Id:
1V @ 250µA
Part Status:
Obsolete
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Current - Continuous Drain (Id) @ 25°C:
4.4A, 3A
Base Part Number:
SI5515
Gate Charge (Qg) (Max) @ Vgs:
7.5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
40 mOhm @ 4.4A, 4.5V
FET Type:
N and P-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
1206-8 ChipFET™
Packaging:
Cut Tape (CT)
Power - Max:
1.1W
Other Names:
SI5515DC-T1-E3CT
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FAQs
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI5515DC-T1-E3. The FET features of the product include logic level gate. It features mosfet array n and p-channel 20v 4.4a, 3a 1.1w surface mount 1206-8 chipfet™. The typical Vgs (th) (max) of the product is 1v @ 250µa. Furthermore, the product is obsolete The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The continuous current drain at 25°C is 4.4a, 3a. Base Part Number: si5515. The maximum gate charge and given voltages include 7.5nc @ 4.5v. It has a maximum Rds On and voltage of 40 mohm @ 4.4a, 4.5v. It carries FET type n and p-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 1206-8 chipfet™ is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 1.1w. Alternative Names include si5515dc-t1-e3ct.
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