SI1016CX-T1-GE3, Vishay Siliconix
Product Information
FET Feature:
Logic Level Gate
Vgs(th) (Max) @ Id:
1V @ 250µA
Detailed Description:
Mosfet Array N and P-Channel 20V 220mW Surface Mount SC-89-6
Input Capacitance (Ciss) (Max) @ Vds:
43pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
2nC @ 4.5V
Mounting Type:
Surface Mount
Standard Package:
1
Part Status:
Active
Series:
TrenchFET®
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
396 mOhm @ 500mA, 4.5V
Supplier Device Package:
SC-89-6
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
220mW
Drain to Source Voltage (Vdss):
20V
Other Names:
SI1016CX-T1-GE3CT
Manufacturer:
Vishay Siliconix
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI1016CX-T1-GE3. The FET features of the product include logic level gate. The typical Vgs (th) (max) of the product is 1v @ 250µa. It features mosfet array n and p-channel 20v 220mw surface mount sc-89-6. The product's input capacitance at maximum includes 43pf @ 10v. The maximum gate charge and given voltages include 2nc @ 4.5v. The product is available in surface mount configuration. It is available in the standard package of 1. Furthermore, the product is active The product trenchfet®, is a highly preferred choice for users. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 396 mohm @ 500ma, 4.5v. sc-89-6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 220mw. The product has a 20v drain to source voltage. Alternative Names include si1016cx-t1-ge3ct. The vishay siliconix's product offers user-desired applications.
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