SI3900DV-T1-E3, Vishay Siliconix
Product Information
FET Feature:
Logic Level Gate
Manufacturer Standard Lead Time:
22 Weeks
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 2A 830mW Surface Mount 6-TSOP
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Current - Continuous Drain (Id) @ 25°C:
2A
Base Part Number:
SI3900
Gate Charge (Qg) (Max) @ Vgs:
4nC @ 4.5V
Rds On (Max) @ Id, Vgs:
125 mOhm @ 2.4A, 4.5V
FET Type:
2 N-Channel (Dual)
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
6-TSOP
Packaging:
Cut Tape (CT)
Power - Max:
830mW
Other Names:
SI3900DV-T1-E3CT
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FAQs
Yes. We ship Vishay Siliconix SI3900DV-T1-E3 Internationally to many countries around the world.
You can order Vishay Siliconix brand products like Vishay Siliconix SI3900DV-T1-E3 directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
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We accept all major payment methods for all products including ET12249261. Please check your shopping cart at the time of order.
Yes. Our products in Transistors - FETs, MOSFETs - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SI3900DV-T1-E3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SI3900DV-T1-E3.
We use our internationally recognized delivery partners UPS/DHL. Collection of Vishay Siliconix SI3900DV-T1-E3 can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "Vishay Siliconix" products or by using our unique Enrgtech manufacturing part number ET12249261.
This is manufactured by Vishay Siliconix. The manufacturer part number is SI3900DV-T1-E3. The FET features of the product include logic level gate. It has typical 22 weeks of manufacturer standard lead time. It features mosfet array 2 n-channel (dual) 20v 2a 830mw surface mount 6-tsop. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The continuous current drain at 25°C is 2a. Base Part Number: si3900. The maximum gate charge and given voltages include 4nc @ 4.5v. It has a maximum Rds On and voltage of 125 mohm @ 2.4a, 4.5v. It carries FET type 2 n-channel (dual). It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 6-tsop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 830mw. Alternative Names include si3900dv-t1-e3ct.
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