APT6010B2LLG, Microsemi Corporation
Product Information
Rds On (Max) @ Id, Vgs:
100 mOhm @ 27A, 10V
Input Capacitance (Ciss) (Max) @ Vds:
6710pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
150nC @ 10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Part Status:
Active
Series:
POWER MOS 7®
Standard Package:
30
Supplier Device Package:
T-MAX™ [B2]
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-247-3 Variant
Power Dissipation (Max):
690W (Tc)
Drain to Source Voltage (Vdss):
600V
Current - Continuous Drain (Id) @ 25°C:
54A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APT6010B2LLG. It has a maximum Rds On and voltage of 100 mohm @ 27a, 10v. The product's input capacitance at maximum includes 6710pf @ 25v. The maximum gate charge and given voltages include 150nc @ 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. Furthermore, the product is active The product power mos 7®, is a highly preferred choice for users. It is available in the standard package of 30. t-max™ [b2] is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 690w (tc). The product has a 600v drain to source voltage. The continuous current drain at 25°C is 54a (tc). This product use mosfet (metal oxide) technology. The microsemi corporation's product offers user-desired applications.
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