NTS2101PT1G, ON Semiconductor
Product Information
Manufacturer Standard Lead Time:
36 Weeks
Detailed Description:
P-Channel 8V 1.4A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323)
Vgs(th) (Max) @ Id:
700mV @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Gate Charge (Qg) (Max) @ Vgs:
6.4nC @ 5V
Rds On (Max) @ Id, Vgs:
100 mOhm @ 1A, 4.5V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
8V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
640pF @ 8V
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.4A (Ta)
Power Dissipation (Max):
290mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
NTS2101PT1GOSCT
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This is manufactured by ON Semiconductor. The manufacturer part number is NTS2101PT1G. It has typical 36 weeks of manufacturer standard lead time. It features p-channel 8v 1.4a (ta) 290mw (ta) surface mount sc-70-3 (sot323). The typical Vgs (th) (max) of the product is 700mv @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 6.4nc @ 5v. It has a maximum Rds On and voltage of 100 mohm @ 1a, 4.5v. It carries FET type p-channel. It is available in the standard package of 1. The on semiconductor's product offers user-desired applications. The product has a 8v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 640pf @ 8v. The product is available in surface mount configuration. sc-70-3 (sot323) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.4a (ta). The product carries maximum power dissipation 290mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include nts2101pt1gosct.
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