TPW1R306PL,L1Q, Toshiba Semiconductor and Storage

Enrgtech Part No: ET10874979
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Manufacturer Part No:
TPW1R306PL,L1Q
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Manufacturer: Toshiba Semiconductor and Storage

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Product Information

Manufacturer Standard Lead Time:

12 Weeks

Moisture Sensitivity Level (MSL):

1 (Unlimited)

Detailed Description:

N-Channel 60V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance

Mounting Type:

Surface Mount

Part Status:

Active

Series:

U-MOSIX-H

Vgs (Max):

±20V

Standard Package:

Supplier Device Package:

8-DSOP Advance

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Packaging:

Cut Tape (CT)

FET Type:

N-Channel

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPW1R306PL,L1Q. It has typical 12 weeks of manufacturer standard lead time. Its typical moisture sensitivity level is 1 (unlimited). It features n-channel 60v 260a (tc) 960mw (ta), 170w (tc) surface mount 8-dsop advance. The product is available in surface mount configuration. Furthermore, the product is active The product u-mosix-h, is a highly preferred choice for users. The maximum Vgs rate is ±20v. It is available in the standard package of 1. 8-dsop advance is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 960mw (ta), 170w (tc). The product has a 60v drain to source voltage. The continuous current drain at 25°C is 260a (tc). This product use mosfet (metal oxide) technology. Alternative Names include tpw1r306pll1qct. The toshiba semiconductor and storage's product offers user-desired applications.

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