TPN2R304PL,L1Q, Toshiba Semiconductor and Storage
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 40V 80A (Tc) 630mW (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Vgs(th) (Max) @ Id:
2.4V @ 0.3mA
Part Status:
Active
Operating Temperature:
175°C
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
41nC @ 10V
Rds On (Max) @ Id, Vgs:
2.3 mOhm @ 40A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3600pF @ 20V
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Power Dissipation (Max):
630mW (Ta), 104W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TPN2R304PLL1QCT
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPN2R304PL,L1Q. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 40v 80a (tc) 630mw (ta), 104w (tc) surface mount 8-tson advance (3.3x3.3). The typical Vgs (th) (max) of the product is 2.4v @ 0.3ma. Furthermore, the product is active The product has 175°c operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 41nc @ 10v. It has a maximum Rds On and voltage of 2.3 mohm @ 40a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3600pf @ 20v. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. 8-tson advance (3.3x3.3) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 80a (tc). The product carries maximum power dissipation 630mw (ta), 104w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tpn2r304pll1qct.
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