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NVD5890NLT4G-VF01, ON Semiconductor

NVD5890NLT4G-VF01 ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 40V 24A (Ta), 123A (Tc) 4W (Ta), 107W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
42nC @ 4.5V
Rds On (Max) @ Id, Vgs:
3.7 mOhm @ 50A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
4760pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
24A (Ta), 123A (Tc)
Power Dissipation (Max):
4W (Ta), 107W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
NVD5890NLT4G-VF01OSCT
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NVD5890NLT4G-VF01. It features n-channel 40v 24a (ta), 123a (tc) 4w (ta), 107w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. Furthermore, the product is active The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 42nc @ 4.5v. It has a maximum Rds On and voltage of 3.7 mohm @ 50a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 4760pf @ 25v. The product is available in surface mount configuration. dpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 24a (ta), 123a (tc). The product carries maximum power dissipation 4w (ta), 107w (tc). This product use mosfet (metal oxide) technology. Alternative Names include nvd5890nlt4g-vf01osct.

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NVD5yyy Assembly/Test Site Transfer 7/Jun/2017(PCN Assembly/Origin)
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G700HC to G700HF 24/Oct/2016(PCN Assembly/Origin)
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NVD5890NL(Datasheets)
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NVD5890NLT4G/NVD5490NLT4G 07/Dec/2016(PCN Part Number)

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You will get a confirmation email regarding your order of ON Semiconductor NVD5890NLT4G-VF01. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NVD5890NLT4G-VF01.
We use our internationally recognized delivery partners UPS/DHL. Collection of ON Semiconductor NVD5890NLT4G-VF01 can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "ON Semiconductor" products or by using our unique Enrgtech manufacturing part number ET10992223.