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NTD3055L170T4G, ON Semiconductor

NTD3055L170T4G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
4 Weeks
Detailed Description:
N-Channel 60V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Surface Mount DPAK
Vgs(th) (Max) @ Id:
2V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 5V
Rds On (Max) @ Id, Vgs:
170 mOhm @ 4.5A, 5V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
275pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK
Drive Voltage (Max Rds On, Min Rds On):
5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Power Dissipation (Max):
1.5W (Ta), 28.5W (Tj)
Technology:
MOSFET (Metal Oxide)
Other Names:
NTD3055L170T4GOSCT
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NTD3055L170T4G. It has typical 4 weeks of manufacturer standard lead time. It features n-channel 60v 9a (ta) 1.5w (ta), 28.5w (tj) surface mount dpak. The typical Vgs (th) (max) of the product is 2v @ 250µa. Furthermore, the product is active The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 10nc @ 5v. It has a maximum Rds On and voltage of 170 mohm @ 4.5a, 5v. It carries FET type n-channel. It is available in the standard package of 1. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±15v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 275pf @ 25v. The product is available in surface mount configuration. dpak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9a (ta). The product carries maximum power dissipation 1.5w (ta), 28.5w (tj). This product use mosfet (metal oxide) technology. Alternative Names include ntd3055l170t4gosct.

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Multiple Devices 08/Apr/2011(PCN Obsolescence/ EOL)
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Reactivation Notice 06/Jan/2012(PCN Obsolescence/ EOL)
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Wafer Fab Expansion 24/Jul/2015(PCN Assembly/Origin)
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Mult Dev Assembly Sit Add 17/Apr/2018(PCN Assembly/Origin)
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Mult Dev Assembly Site Add 8/Mar/2018(PCN Assembly/Origin)
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Qualification Assembly Test Site 20/Feb/2014(PCN Assembly/Origin)
pdf icon
Mult Devices 29/Aug/2017(PCN Assembly/Origin)
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NTD3055L170(Datasheets)

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