SSM3J56ACT,L3F, Toshiba Semiconductor and Storage
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
P-Channel 20V 1.4A (Ta) 500mW (Ta) Surface Mount CST3
Vgs(th) (Max) @ Id:
1V @ 1mA
Part Status:
Active
Operating Temperature:
150°C
Package / Case:
SC-101, SOT-883
Gate Charge (Qg) (Max) @ Vgs:
1.6nC @ 4.5V
Rds On (Max) @ Id, Vgs:
390 mOhm @ 800mA, 4.5V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
100pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
CST3
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.4A (Ta)
Power Dissipation (Max):
500mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SSM3J56ACTL3FCT
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J56ACT,L3F. It has typical 12 weeks of manufacturer standard lead time. It features p-channel 20v 1.4a (ta) 500mw (ta) surface mount cst3. The typical Vgs (th) (max) of the product is 1v @ 1ma. Furthermore, the product is active The product has 150°c operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 1.6nc @ 4.5v. It has a maximum Rds On and voltage of 390 mohm @ 800ma, 4.5v. It carries FET type p-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 100pf @ 10v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. cst3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.4a (ta). The product carries maximum power dissipation 500mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include ssm3j56actl3fct.
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