NTB5605PT4G, ON Semiconductor
Product Information
Manufacturer Standard Lead Time:
28 Weeks
Detailed Description:
P-Channel 60V 18.5A (Ta) 88W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
2V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 5V
Rds On (Max) @ Id, Vgs:
140 mOhm @ 8.5A, 5V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1190pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Drive Voltage (Max Rds On, Min Rds On):
5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
18.5A (Ta)
Power Dissipation (Max):
88W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
NTB5605PT4GOSCT
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This is manufactured by ON Semiconductor. The manufacturer part number is NTB5605PT4G. It has typical 28 weeks of manufacturer standard lead time. It features p-channel 60v 18.5a (ta) 88w (tc) surface mount d2pak. The typical Vgs (th) (max) of the product is 2v @ 250µa. Furthermore, the product is active The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 22nc @ 5v. It has a maximum Rds On and voltage of 140 mohm @ 8.5a, 5v. It carries FET type p-channel. It is available in the standard package of 1. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1190pf @ 25v. The product is available in surface mount configuration. d2pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 18.5a (ta). The product carries maximum power dissipation 88w (tc). This product use mosfet (metal oxide) technology. Alternative Names include ntb5605pt4gosct.
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