SI7370DP-T1-GE3, Vishay Siliconix
Product Information
Detailed Description:
N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount
Vgs(th) (Max) @ Id:
4V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs:
57nC @ 10V
Rds On (Max) @ Id, Vgs:
11 mOhm @ 12A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Surface Mount
Series:
TrenchFET®
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
9.6A (Ta)
Power Dissipation (Max):
1.9W (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SI7370DP-T1-GE3CT
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Yes. We ship Vishay Siliconix SI7370DP-T1-GE3 Internationally to many countries around the world.
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI7370DP-T1-GE3. It features n-channel 60v 9.6a (ta) 1.9w (ta) surface mount. The typical Vgs (th) (max) of the product is 4v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 57nc @ 10v. It has a maximum Rds On and voltage of 11 mohm @ 12a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 9.6a (ta). The product carries maximum power dissipation 1.9w (ta). This product use mosfet (metal oxide) technology. Alternative Names include si7370dp-t1-ge3ct.
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