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NTB45N06LT4G, ON Semiconductor

NTB45N06LT4G ON Semiconductor
ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
28 Weeks
Detailed Description:
N-Channel 60V 45A (Ta) 2.4W (Ta), 125W (Tj) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
2V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
32nC @ 5V
Rds On (Max) @ Id, Vgs:
28 mOhm @ 22.5A, 5V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±15V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1700pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Drive Voltage (Max Rds On, Min Rds On):
5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
45A (Ta)
Power Dissipation (Max):
2.4W (Ta), 125W (Tj)
Technology:
MOSFET (Metal Oxide)
Other Names:
NTB45N06LT4GOSCT
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTB45N06LT4G. It has typical 28 weeks of manufacturer standard lead time. It features n-channel 60v 45a (ta) 2.4w (ta), 125w (tj) surface mount d2pak. The typical Vgs (th) (max) of the product is 2v @ 250µa. Furthermore, the product is active The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 32nc @ 5v. It has a maximum Rds On and voltage of 28 mohm @ 22.5a, 5v. It carries FET type n-channel. It is available in the standard package of 1. The on semiconductor's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±15v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1700pf @ 25v. The product is available in surface mount configuration. d2pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 45a (ta). The product carries maximum power dissipation 2.4w (ta), 125w (tj). This product use mosfet (metal oxide) technology. Alternative Names include ntb45n06lt4gosct.

pdf icon
Wafer Fab Expansion 24/Jul/2015(PCN Assembly/Origin)
pdf icon
NTP, NTB45N06L(Datasheets)
pdf icon
1298 (UK2011-EN PDF)(Catalog Page)

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