SI7129DN-T1-GE3, Vishay Siliconix
Product Information
Detailed Description:
P-Channel 30V 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8
Vgs(th) (Max) @ Id:
2.8V @ 250µA
Part Status:
Active
Operating Temperature:
-50°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs:
71nC @ 10V
Rds On (Max) @ Id, Vgs:
11.4 mOhm @ 14.4A, 10V
FET Type:
P-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
3345pF @ 15V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Power Dissipation (Max):
3.8W (Ta), 52.1W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
SI7129DN-T1-GE3CT
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI7129DN-T1-GE3. It features p-channel 30v 35a (tc) 3.8w (ta), 52.1w (tc) surface mount powerpak® 1212-8. The typical Vgs (th) (max) of the product is 2.8v @ 250µa. Furthermore, the product is active The product has -50°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 71nc @ 10v. It has a maximum Rds On and voltage of 11.4 mohm @ 14.4a, 10v. It carries FET type p-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 3345pf @ 15v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® 1212-8 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 35a (tc). The product carries maximum power dissipation 3.8w (ta), 52.1w (tc). This product use mosfet (metal oxide) technology. Alternative Names include si7129dn-t1-ge3ct.
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