SI2314EDS-T1-E3, Vishay Siliconix
Product Information
Manufacturer Standard Lead Time:
22 Weeks
Detailed Description:
N-Channel 20V 3.77A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id:
950mV @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 4.5V
Rds On (Max) @ Id, Vgs:
33 mOhm @ 5A, 4.5V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
3.77A (Ta)
Power Dissipation (Max):
750mW (Ta)
Technology:
MOSFET (Metal Oxide)
Other Names:
SI2314EDS-T1-E3CT
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI2314EDS-T1-E3. It has typical 22 weeks of manufacturer standard lead time. It features n-channel 20v 3.77a (ta) 750mw (ta) surface mount sot-23-3 (to-236). The typical Vgs (th) (max) of the product is 950mv @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 14nc @ 4.5v. It has a maximum Rds On and voltage of 33 mohm @ 5a, 4.5v. It carries FET type n-channel. It is available in the standard package of 1. The vishay siliconix's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. sot-23-3 (to-236) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 3.77a (ta). The product carries maximum power dissipation 750mw (ta). This product use mosfet (metal oxide) technology. Alternative Names include si2314eds-t1-e3ct.
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