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TPHR9203PL,L1Q, Toshiba Semiconductor and Storage

TPHR9203PL-L1Q Toshiba Semiconductor and Storage TPHR9203PL,L1Q
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
N-Channel 30V 150A (Tc) 132W (Tc) Surface Mount 8-SOP Advance (5x5)
Vgs(th) (Max) @ Id:
2.1V @ 500µA
Part Status:
Active
Operating Temperature:
175°C (TJ)
Package / Case:
8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs:
80nC @ 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7540pF @ 15V
Mounting Type:
Surface Mount
Series:
U-MOSIX-H
Supplier Device Package:
8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
150A (Tc)
Power Dissipation (Max):
132W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TPHR9203PLL1QCT
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPHR9203PL,L1Q. It has typical 16 weeks of manufacturer standard lead time. It features n-channel 30v 150a (tc) 132w (tc) surface mount 8-sop advance (5x5). The typical Vgs (th) (max) of the product is 2.1v @ 500µa. Furthermore, the product is active The product has 175°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 80nc @ 10v. It carries FET type n-channel. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 7540pf @ 15v. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. 8-sop advance (5x5) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 150a (tc). The product carries maximum power dissipation 132w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tphr9203pll1qct.

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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage TPHR9203PL,L1Q. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage TPHR9203PL,L1Q.
We use our internationally recognized delivery partners UPS/DHL. Collection of Toshiba Semiconductor and Storage TPHR9203PL,L1Q can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "Toshiba Semiconductor and Storage" products or by using our unique Enrgtech manufacturing part number ET12189089.