FQB8N60CTM_WS, Fairchild/ON Semiconductor
Product Information
Manufacturer Standard Lead Time:
6 Weeks
Vgs(th) (Max) @ Id:
4V @ 250µA
Part Status:
Active
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
Rds On (Max) @ Id, Vgs:
1.2 Ohm @ 3.75A, 10V
FET Type:
N-Channel
Standard Package:
1
Manufacturer:
Fairchild/ON Semiconductor
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1255pF @ 25V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
D²PAK (TO-263AB)
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
7.5A (Tc)
Power Dissipation (Max):
3.13W (Ta), 147W (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Fairchild/ON Semiconductor. The manufacturer part number is FQB8N60CTM_WS. It has typical 6 weeks of manufacturer standard lead time. The typical Vgs (th) (max) of the product is 4v @ 250µa. Furthermore, the product is active The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 36nc @ 10v. It has a maximum Rds On and voltage of 1.2 ohm @ 3.75a, 10v. It carries FET type n-channel. It is available in the standard package of 1. The fairchild/on semiconductor's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1255pf @ 25v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. d²pak (to-263ab) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 7.5a (tc). The product carries maximum power dissipation 3.13w (ta), 147w (tc). This product use mosfet (metal oxide) technology.
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