TK6Q65W,S1Q, Toshiba Semiconductor and Storage
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Detailed Description:
N-Channel 650V 5.8A (Ta) 60W (Tc) Through Hole I-PAK
Vgs(th) (Max) @ Id:
3.5V @ 180µA
Part Status:
Active
Operating Temperature:
150°C (TJ)
Package / Case:
TO-251-3 Stub Leads, IPak
Gate Charge (Qg) (Max) @ Vgs:
11nC @ 10V
Rds On (Max) @ Id, Vgs:
1.05 Ohm @ 2.9A, 10V
FET Type:
N-Channel
Standard Package:
75
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
650V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
390pF @ 300V
Mounting Type:
Through Hole
Series:
DTMOSIV
Supplier Device Package:
I-PAK
Drive Voltage (Max Rds On, Min Rds On):
10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
5.8A (Ta)
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
Other Names:
TK6Q65W,S1Q(S
TK6Q65WS1Q
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FAQs
Yes. We ship Toshiba Semiconductor and Storage TK6Q65W,S1Q Internationally to many countries around the world.
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Yes. Our products in Transistors - FETs, MOSFETs - Single category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK6Q65W,S1Q. It has typical 12 weeks of manufacturer standard lead time. It features n-channel 650v 5.8a (ta) 60w (tc) through hole i-pak. The typical Vgs (th) (max) of the product is 3.5v @ 180µa. Furthermore, the product is active The product has 150°c (tj) operating temperature range. Moreover, the product comes in [Package/ Case]. The maximum gate charge and given voltages include 11nc @ 10v. It has a maximum Rds On and voltage of 1.05 ohm @ 2.9a, 10v. It carries FET type n-channel. It is available in the standard package of 75. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 650v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 390pf @ 300v. The product is available in through hole configuration. The product dtmosiv, is a highly preferred choice for users. i-pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 5.8a (ta). The product carries maximum power dissipation 60w (tc). This product use mosfet (metal oxide) technology. Alternative Names include tk6q65w,s1q(s tk6q65ws1q.
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