2SK3666-2-TB-E, ON Semiconductor
Product Information
Manufacturer Standard Lead Time:
19 Weeks
Current Drain (Id) - Max:
10mA
Detailed Description:
JFET N-Channel 10mA 200mW Surface Mount 3-CP
Input Capacitance (Ciss) (Max) @ Vds:
4pF @ 10V
Mounting Type:
Surface Mount
Current - Drain (Idss) @ Vds (Vgs=0):
600µA @ 10V
Part Status:
Active
Standard Package:
1
Package / Case:
TO-236-3, SC-59, SOT-23-3
Resistance - RDS(On):
200 Ohms
Voltage - Cutoff (VGS off) @ Id:
180mV @ 1µA
Supplier Device Package:
3-CP
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
200mW
Drain to Source Voltage (Vdss):
30V
Other Names:
2SK3666-2-TB-EOSCT
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - JFETs category are shipped in lowest possible time.
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This is manufactured by ON Semiconductor. The manufacturer part number is 2SK3666-2-TB-E. It has typical 19 weeks of manufacturer standard lead time. It features jfet n-channel 10ma 200mw surface mount 3-cp. The product's input capacitance at maximum includes 4pf @ 10v. The product is available in surface mount configuration. The product features 600µa @ 10v drain current at given volts. Furthermore, the product is active It is available in the standard package of 1. Moreover, the product comes in [Package/ Case]. The product features cut off 180mv @ 1µa. 3-cp is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 200mw. The product has a 30v drain to source voltage. Alternative Names include 2sk3666-2-tb-eosct. The on semiconductor's product offers user-desired applications.
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