Power Switch ICs

New items

TBD62083AFWG(Z,EHZ, Toshiba

TB62083A series and TB62084A series are DMOS transistor array with 8 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use 8 circuits built-in High voltage : VOUT = 50 V (MAX) High current : IOUT = 500 mA/ch (MAX) Input voltage(output on) : TBD62083A series 2.5 V (MIN) TBD62084A series 7.0 V (MIN) Input voltage(output off) : TBD62083A series 0.6 V (MAX) TBD62084A series 1.0 V (MAX) Package : PG type P-DIP18-300-2.54-001 FG type SOP18-P-375-1.27 FNG type SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001

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TBD62084AFG(Z), Toshiba

TB62083A series and TB62084A series are DMOS transistor array with 8 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use 8 circuits built-in High voltage : VOUT = 50 V (MAX) High current : IOUT = 500 mA/ch (MAX) Input voltage(output on) : TBD62083A series 2.5 V (MIN) TBD62084A series 7.0 V (MIN) Input voltage(output off) : TBD62083A series 0.6 V (MAX) TBD62084A series 1.0 V (MAX) Package : PG type P-DIP18-300-2.54-001 FG type SOP18-P-375-1.27 FNG type SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001

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TBD62083AFG(Z), Toshiba

MOSFET Driver Arrays, Toshiba DMOS transistor arrays suitable for driving multiple resistive or inductive loads. The TBD62083 series are octal N-channel MOSFET drivers with clamping diodes and common ground and supply pins. The inputs are compatible with low voltage driving sources. Relay and Inductive Load Drivers

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TBD62064AFG(Z), Toshiba

TBD62064A series are DMOS transistor array with 4 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use 4 circuits built-in High voltage : VOUT = 50 V (MAX) High current : IOUT = 1.5 A/ch (MAX) Input voltage(output on) : 2.5 V (MIN) Input voltage(output off) : 0.6 V (MAX) Package : PG type DIP16-P-300-2.54A FG type HSOP16-P-300-1.00

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TBD62083AFNG(Z), Toshiba

TB62083A series and TB62084A series are DMOS transistor array with 8 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use 8 circuits built-in High voltage : VOUT = 50 V (MAX) High current : IOUT = 500 mA/ch (MAX) Input voltage(output on) : TBD62083A series 2.5 V (MIN) TBD62084A series 7.0 V (MIN) Input voltage(output off) : TBD62083A series 0.6 V (MAX) TBD62084A series 1.0 V (MAX) Package : PG type P-DIP18-300-2.54-001 FG type SOP18-P-375-1.27 FNG type SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001

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MAX14900EAGM+CKT, Maxim Integrated

Low Power for High-Density Modules3mA (max) Total Supply Current165mΩ (max) High-Side RON at +125°CFast Switching Ideal for Accurate, High-Speed Control Systems2μs Propagation Delays (High-Side Mode)0.8μs Propagation Delays (Push-Pull Mode)100kHz (max) Push-Pull Mode Switching RateExtensive Fault Feedback Eases Maintenance and Reduces Installation TimeGlobal and Per-Channel DiagnosticsOpen Load/Wire DetectionThermal Shutdown Fault IndicationOutput Logic State FeedbackUndervoltage LockoutSmall Packages with Serial Interface Allows Making High-Density ModulesDaisy-Chainable SPI Minimizes Isolation Cost7mm x 7mm, 48-Pin QFN and TQFN Packages ApplicationsHigh-Density Digital Output ModulesMotor ControllersProgrammable Logic ControllersPWM/PPO Control

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TBD62083AFG(Z,EL), Toshiba

MOSFET Driver Arrays, Toshiba DMOS transistor arrays suitable for driving multiple resistive or inductive loads. The TBD62083 series are octal N-channel MOSFET drivers with clamping diodes and common ground and supply pins. The inputs are compatible with low voltage driving sources. Relay and Inductive Load Drivers

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New items

TBD62003AFWG(Z,EHZ, Toshiba

TBD62003A series and TBD62004A series are DMOStransistor array with 7 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use 7 circuits built-in High voltage : VOUT = 50 V (MAX) High current : IOUT = 500 mA/ch (MAX) Input voltage(output on) : TBD62003A series 2.5 V (MIN) TBD62004A series 7.0 V (MIN) Input voltage(output off) : TBD62003A series 0.6 V (MAX) TBD62004A series 1.0 V (MAX) Package : PG type DIP16-P-300-2.54A FG type SOP16-P-225-1.27 FNG type SSOP16-P-225-0.65B FWG type P-SOP16-0410-1.27-002

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TBD62004AFG(Z), Toshiba

TBD62003A series and TBD62004A series are DMOStransistor array with 7 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use 7 circuits built-in High voltage : VOUT = 50 V (MAX) High current : IOUT = 500 mA/ch (MAX) Input voltage(output on) : TBD62003A series 2.5 V (MIN) TBD62004A series 7.0 V (MIN) Input voltage(output off) : TBD62003A series 0.6 V (MAX) TBD62004A series 1.0 V (MAX) Package : PG type DIP16-P-300-2.54A FG type SOP16-P-225-1.27 FNG type SSOP16-P-225-0.65B FWG type P-SOP16-0410-1.27-002

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MAX16946GTE/V+, Maxim Integrated

Switch Phantom Power-On/-Off Under μC ControlPrecision Adjustable Current Limit300mA (max), TA = +105°C500mA (max), TA = +85°C (MAX16946 in SW Mode Only) Regulated Output Voltage (MAX16946)—8.5V Fixed or Adjustable Between 3.3V and 15VCurrent Measurement Analog Voltage OutputDetect Open-Load and Short-Circuit ConditionsProvide Open-Drain Fault Signals (Active-Low SC and Active-Low OL)Overcurrent Blanking During StartupThermal Shutdown-40°C to +105°C Operating Temperature Range ApplicationsAutomotive Remote Module PowerAutomotive Safety and InfotainmentRemote LNA Phantom PowerRelated ResourcesRelated PackagingTechnical DocsReference Designs

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NCP451FCT2G, ON Semiconductor

The NCP451 is a very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, thanks to a current consumption optimization with NMOS structure, leakage currents are eliminated by isolating connected IC on the battery when not used. A wide voltage range is proposed from 0.7V to 5.5V. 0.75 V - 5.5 V operating range 12 m RDS(ON) at 3.6 V DC current up to 3 A Output Auto-discharge Compatible with the latest generation of SoCs and CPUs Minimizes voltage drop and power loss Support for portable processors Eliminates residual voltage on the output rail Applications Load Management

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NCP435FCT2G, ON Semiconductor

The NCP434 and NCP435 are very low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy. Indeed, thanks to a current consumption optimization with PMOS structure, leakage currents are eliminated by isolating connected IC on the battery when not used. Output discharge path is available in NCP435 version. 1.2 V - 3.6 V operating range 29 m Ohms RDSON at 3.3V DC current up to 2 A Output Auto-discharge (NCP435) WLCSP4 0.96 x 0.96 mm Applications Smart phones Computing Tablets Portable devices

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New Items

TBD62083AFWG(Z,EHZ, Toshiba

TBD62084AFG(Z), Toshiba

TBD62083AFG(Z), Toshiba

TBD62064AFG(Z), Toshiba

TBD62083AFNG(Z), Toshiba

MAX14900EAGM+CKT, Maxim Integrated

TBD62083AFG(Z,EL), Toshiba

TBD62003AFWG(Z,EHZ, Toshiba

TBD62004AFG(Z), Toshiba

MAX16946GTE/V+, Maxim Integrated

NCP451FCT2G, ON Semiconductor

NCP435FCT2G, ON Semiconductor

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