HN2D01JE(TE85L,F), Toshiba Semiconductor and Storage

Enrgtech Part No: ET11564368
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Manufacturer Part No:
HN2D01JE(TE85L,F)
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Manufacturer: Toshiba Semiconductor and Storage

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Product Information

Reverse Recovery Time (trr):

1.6ns

Detailed Description:

Diode Array 2 Independent Standard 80V 100mA Surface Mount SOT-553

Current - Reverse Leakage @ Vr:

500nA @ 80V

Operating Temperature - Junction:

150°C (Max)

Mounting Type:

Surface Mount

Part Status:

Discontinued at Digi-Key

Diode Configuration:

2 Independent

Standard Package:

Voltage - Forward (Vf) (Max) @ If:

1.2V @ 100mA

Supplier Device Package:

ESV

Packaging:

Cut Tape (CT)

Current - Average Rectified (Io) (per Diode):

100mA

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN2D01JE(TE85L,F). It has a trr (reverse recovery time) of 1.6ns. It features diode array 2 independent standard 80v 100ma surface mount sot-553. 500na @ 80v is the reverse leakage value of a bespoke product. The product operate at temperatures ranging from 150°c (max). The product is available in surface mount configuration. Furthermore, the product is discontinued at digi-key The diode features a 2 independent configuration. It is available in the standard package of 1. The product has a maximum forward voltage of 1.2v @ 100ma. esv is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The average rectified current at per diode is 100ma. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. While it has maximum reverse voltage of 80v. It is designed with a standard diode. It has a robust speed of small signal =. Alternative Names include hn2d01je(te85lf)ct. The toshiba semiconductor and storage's product offers user-desired applications.

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