MB85R4M2TFN-G-ASE1, Fujitsu Electronics America, Inc.
Product Information
Manufacturer Standard Lead Time:
20 Weeks
Memory Type:
Non-Volatile
Detailed Description:
FRAM (Ferroelectric RAM) Memory IC 4Mb (256K x 16) Parallel 150ns 44-TSOP
Mounting Type:
Surface Mount
Part Status:
Active
Standard Package:
500
Memory Interface:
Parallel
Supplier Device Package:
44-TSOP
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Write Cycle Time - Word, Page:
150ns
Packaging:
Tray
Operating Temperature:
-40°C ~ 85°C (TA)
Memory Size:
4Mb (256K x 16)
Voltage - Supply:
1.8 V ~ 3.6 V
Package / Case:
44-TSOP (0.400", 10.16mm Width)
Memory Format:
FRAM
Technology:
FRAM (Ferroelectric RAM)
Other Names:
865-1266
865-1266-1
865-1266-1-ND
Access Time:
150ns
Manufacturer:
Fujitsu Electronics America, Inc.
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This is manufactured by Fujitsu Electronics America, Inc.. The manufacturer part number is MB85R4M2TFN-G-ASE1. It has typical 20 weeks of manufacturer standard lead time. It is a type of non-volatile memory type. It features fram (ferroelectric ram) memory ic 4mb (256k x 16) parallel 150ns 44-tsop. The product is available in surface mount configuration. Furthermore, the product is active It is available in the standard package of 500. It is a parallel memory interface. 44-tsop is the supplier device package value. Its typical moisture sensitivity level is 1 (unlimited). It allows a 150ns of write cycle time. In addition, tray is the available packaging type of the product. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 4mb (256k x 16). It has optimum voltage supply of 1.8 v ~ 3.6 v. Moreover, the product comes in [Package/ Case]. It is a sort of fram memory. This product use fram (ferroelectric ram) technology. Alternative Names include 865-1266 865-1266-1 865-1266-1-nd. It allows 150ns access time. The fujitsu electronics america, inc.'s product offers user-desired applications.
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