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RN1904FE,LF(CT, Toshiba Semiconductor and Storage

RN1904FE-LF-CT Toshiba Semiconductor and Storage RN1904FE,LF(CT
Toshiba Semiconductor and Storage

Product Information

Resistor - Base (R1):
47 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Transistor Type:
2 NPN - Pre-Biased (Dual)
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Part Status:
Discontinued at Digi-Key
Standard Package:
1
Supplier Device Package:
ES6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47 kOhms
Power - Max:
100mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Other Names:
RN1904FE(T5LFT)CT RN1904FE(T5LFT)CT-ND RN1904FELF(CTCT
Manufacturer:
Toshiba Semiconductor and Storage
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1904FE,LF(CT. Resistor - Base - 47 kohms. It features pre-biased bipolar transistor (bjt) 2 npn - pre-biased (dual) 50v 100ma 250mhz 100mw surface mount es6. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 npn - pre-biased (dual) type. The transition frequency of the product is 250mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. es6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47 kohms. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include rn1904fe(t5lft)ct rn1904fe(t5lft)ct-nd rn1904felf(ctct. The toshiba semiconductor and storage's product offers user-desired applications.

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FAQs

Yes. We ship Toshiba Semiconductor and Storage RN1904FE,LF(CT Internationally to many countries around the world.
You can order Toshiba Semiconductor and Storage brand products like Toshiba Semiconductor and Storage RN1904FE,LF(CT directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
Yes. You can also search RN1904FE,LF(CT on website for other similar products.
We accept all major payment methods for all products including ET11677502. Please check your shopping cart at the time of order.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage RN1904FE,LF(CT. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage RN1904FE,LF(CT.
We use our internationally recognized delivery partners UPS/DHL. Collection of Toshiba Semiconductor and Storage RN1904FE,LF(CT can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "Toshiba Semiconductor and Storage" products or by using our unique Enrgtech manufacturing part number ET11677502.