RN2906,LF, Toshiba Semiconductor and Storage
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Resistor - Base (R1):
4.7 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Current - Collector (Ic) (Max):
100mA
Part Status:
Active
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
200MHz
Voltage - Collector Emitter Breakdown (Max):
50V
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Supplier Device Package:
US6
Packaging:
Cut Tape (CT)
Power - Max:
200mW
Other Names:
RN2906LF(CTCT
RN2906LF(CTCT-ND
RN2906LFCT
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FAQs
Yes. We ship Toshiba Semiconductor and Storage RN2906,LF Internationally to many countries around the world.
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage RN2906,LF. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage RN2906,LF.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2906,LF. It has typical 12 weeks of manufacturer standard lead time. Resistor - Base - 4.7 kohms. It features pre-biased bipolar transistor (bjt) 2 pnp - pre-biased (dual) 50v 100ma 200mhz 200mw surface mount us6. The maximum collector current includes 100ma. Furthermore, the product is active Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in [Package/ Case]. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The maximum collector emitter breakdown voltage of the product is 50v. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 2 pnp - pre-biased (dual) type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. us6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 200mw. Alternative Names include rn2906lf(ctct rn2906lf(ctct-nd rn2906lfct.
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