2N3810L, Microsemi Corporation
Product Information
Current Rating:
1A
Mating Type:
Push Lock
Mounting Type:
Cable Mount
Voltage Rating:
100 V ac
Gender:
Male
Body Orientation:
Straight
Housing Material:
ABS
Contact Plating:
Silver
Series:
YE-118XMB
Shielded/Unshielded:
Shielded
Number of Contacts:
5
Connector Size:
Standard
Contact Material:
Brass
Manufacturer Standard Lead Time:
12 Weeks
Current - Collector (Ic) (Max):
50mA
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce:
150 @ 1mA, 5V
Transistor Type:
2 PNP (Dual)
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
250mV @ 100µA, 1mA
Part Status:
Active
Standard Package:
1
Supplier Device Package:
TO-78-6
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
350mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-78-6 Metal Can
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
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You can order Microsemi Corporation brand products like Microsemi Corporation 2N3810L directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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This is manufactured by Microsemi Corporation. The manufacturer part number is 2N3810L. The product has a current rating of 1a. The product is available in cable mount configuration. Moreover, the product has a nominal 100 v ac voltage rating. In addition, male is the available "Gender" of the product. The product also features robust abs housing material. The product ye-118xmb, is a highly preferred choice for users. The product contains 5 contacts. The product is made from sturdy brass materials. It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 50ma. It features bipolar (bjt) transistor array 2 pnp (dual) 60v 50ma 350mw through hole to-78-6. Furthermore, 150 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The product is available in through hole configuration. The 250mv @ 100µa, 1ma is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 1. to-78-6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 350mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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