HN1A01FE-Y,LF, Toshiba Semiconductor and Storage
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Current - Collector (Ic) (Max):
150mA
Detailed Description:
Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 2mA, 6V
Transistor Type:
2 PNP (Dual)
Frequency - Transition:
80MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
Part Status:
Active
Standard Package:
1
Supplier Device Package:
ES6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
100mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
SOT-563, SOT-666
Current - Collector Cutoff (Max):
100nA (ICBO)
Other Names:
HN1A01FE-Y(T5LFTCT
HN1A01FE-Y(T5LFTCT-ND
HN1A01FE-YLF(BCT
HN1A01FE-YLF(BCT-ND
HN1A01FE-YLFCT
Manufacturer:
Toshiba Semiconductor and Storage
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FAQs
Yes. We ship Toshiba Semiconductor and Storage HN1A01FE-Y,LF Internationally to many countries around the world.
You can order Toshiba Semiconductor and Storage brand products like Toshiba Semiconductor and Storage HN1A01FE-Y,LF directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
Yes. You can also search HN1A01FE-Y,LF on website for other similar products.
We accept all major payment methods for all products including ET11014899. Please check your shopping cart at the time of order.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage HN1A01FE-Y,LF. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage HN1A01FE-Y,LF.
We use our internationally recognized delivery partners UPS/DHL. Collection of Toshiba Semiconductor and Storage HN1A01FE-Y,LF can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "Toshiba Semiconductor and Storage" products or by using our unique Enrgtech manufacturing part number ET11014899.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1A01FE-Y,LF. It has typical 16 weeks of manufacturer standard lead time. The maximum collector current includes 150ma. It features bipolar (bjt) transistor array 2 pnp (dual) 50v 150ma 80mhz 100mw surface mount es6. Furthermore, 120 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The transition frequency of the product is 80mhz. The product is available in surface mount configuration. The 300mv @ 10ma, 100ma is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 1. es6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include hn1a01fe-y(t5lftct hn1a01fe-y(t5lftct-nd hn1a01fe-ylf(bct hn1a01fe-ylf(bct-nd hn1a01fe-ylfct. The toshiba semiconductor and storage's product offers user-desired applications.
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