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ULN2004AFWG,N,E, Toshiba Semiconductor and Storage

ULN2004AFWG-N-E Toshiba Semiconductor and Storage ULN2004AFWG,N,E
Toshiba Semiconductor and Storage

Product Information

Base Part Number:
ULN200*A
Detailed Description:
Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA 1.25W 16-SOL
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 350mA, 2V
Transistor Type:
7 NPN Darlington
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 500µA, 350mA
Part Status:
Discontinued at Digi-Key
Standard Package:
1
Supplier Device Package:
16-SOL
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
-40°C ~ 85°C (TA)
Power - Max:
1.25W
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
16-SOIC (0.154", 3.90mm Width)
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
50µA
Other Names:
ULN2004AFWG(5ELMCT ULN2004AFWG(5ELMCT-ND ULN2004AFWG(O,NEHZCT ULN2004AFWG(O,NEHZCT-ND ULN2004AFWG(OELMCT ULN2004AFWG(OELMCT-ND ULN2004AFWGNECT
Manufacturer:
Toshiba Semiconductor and Storage
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is ULN2004AFWG,N,E. Base Part Number: uln200*a. It features bipolar (bjt) transistor array 7 npn darlington 50v 500ma 1.25w 16-sol. Furthermore, 1000 @ 350ma, 2v is the minimum DC current gain at given voltage. The transistor is a 7 npn darlington type. The 1.6v @ 500µa, 350ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. 16-sol is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has -40°c ~ 85°c (ta) operating temperature range. The maximum power of the product is 1.25w. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 500ma. In addition, 50µa is the maximum current at collector cutoff. Alternative Names include uln2004afwg(5elmct uln2004afwg(5elmct-nd uln2004afwg(o,nehzct uln2004afwg(o,nehzct-nd uln2004afwg(oelmct uln2004afwg(oelmct-nd uln2004afwgnect. The toshiba semiconductor and storage's product offers user-desired applications.

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FAQs

Yes. We ship Toshiba Semiconductor and Storage ULN2004AFWG,N,E Internationally to many countries around the world.
You can order Toshiba Semiconductor and Storage brand products like Toshiba Semiconductor and Storage ULN2004AFWG,N,E directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
Yes. You can also search ULN2004AFWG,N,E on website for other similar products.
We accept all major payment methods for all products including ET11251811. Please check your shopping cart at the time of order.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage ULN2004AFWG,N,E. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage ULN2004AFWG,N,E.
We use our internationally recognized delivery partners UPS/DHL. Collection of Toshiba Semiconductor and Storage ULN2004AFWG,N,E can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "Toshiba Semiconductor and Storage" products or by using our unique Enrgtech manufacturing part number ET11251811.