HN1C03FU-A(TE85L,F, Toshiba Semiconductor and Storage
Product Information
Current - Collector (Ic) (Max):
300mA
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 20V 300mA 30MHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 4mA, 2V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
30MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
100mV @ 3mA, 30mA
Part Status:
Discontinued at Digi-Key
Standard Package:
1
Supplier Device Package:
US6
Voltage - Collector Emitter Breakdown (Max):
20V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
200mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector Cutoff (Max):
100nA (ICBO)
Other Names:
HN1C03FU-A(TE85LFCT
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. We ship Toshiba Semiconductor and Storage HN1C03FU-A(TE85L,F Internationally to many countries around the world.
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1C03FU-A(TE85L,F. The maximum collector current includes 300ma. It features bipolar (bjt) transistor array 2 npn (dual) 20v 300ma 30mhz 200mw surface mount us6. Furthermore, 200 @ 4ma, 2v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 30mhz. The product is available in surface mount configuration. The 100mv @ 3ma, 30ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. us6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 200mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include hn1c03fu-a(te85lfct. The toshiba semiconductor and storage's product offers user-desired applications.
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