RN1131MFV(TL3,T), Toshiba Semiconductor and Storage
Product Information
Resistor - Base (R1):
100 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 150mW Surface Mount VESM
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Transistor Type:
NPN - Pre-Biased
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 5mA
Part Status:
Discontinued at Digi-Key
Standard Package:
1
Supplier Device Package:
VESM
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Power - Max:
150mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
SOT-723
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Other Names:
RN1131MFV(TL3T)CT
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. We ship Toshiba Semiconductor and Storage RN1131MFV(TL3,T) Internationally to many countries around the world.
You can order Toshiba Semiconductor and Storage brand products like Toshiba Semiconductor and Storage RN1131MFV(TL3,T) directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
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Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1131MFV(TL3,T). Resistor - Base - 100 kohms. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 150mw surface mount vesm. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The product is available in surface mount configuration. The 300mv @ 500µa, 5ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. vesm is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 150mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include rn1131mfv(tl3t)ct. The toshiba semiconductor and storage's product offers user-desired applications.
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