2SC3325-O(TE85L,F), Toshiba Semiconductor and Storage
Product Information
Current - Collector (Ic) (Max):
500mA
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 500mA 300MHz 200mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 100mA, 1V
Transistor Type:
NPN
Frequency - Transition:
300MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 10mA, 100mA
Part Status:
Discontinued at Digi-Key
Standard Package:
1
Supplier Device Package:
S-Mini
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
200mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector Cutoff (Max):
100nA (ICBO)
Other Names:
2SC3325-O(TE85LF)CT
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. We ship Toshiba Semiconductor and Storage 2SC3325-O(TE85L,F) Internationally to many countries around the world.
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC3325-O(TE85L,F). The maximum collector current includes 500ma. It features bipolar (bjt) transistor npn 50v 500ma 300mhz 200mw surface mount s-mini. Furthermore, 70 @ 100ma, 1v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 300mhz. The product is available in surface mount configuration. The 250mv @ 10ma, 100ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. s-mini is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 200mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include 2sc3325-o(te85lf)ct. The toshiba semiconductor and storage's product offers user-desired applications.
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