2SA1943N(S1,E,S), Toshiba Semiconductor and Storage
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Current - Collector (Ic) (Max):
15A
Detailed Description:
Bipolar (BJT) Transistor PNP 230V 15A 30MHz 150W Through Hole TO-3P(N)
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 1A, 5V
Transistor Type:
PNP
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 800mA, 8A
Part Status:
Active
Standard Package:
25
Supplier Device Package:
TO-3P(N)
Voltage - Collector Emitter Breakdown (Max):
230V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
150W
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-3P-3, SC-65-3
Current - Collector Cutoff (Max):
5µA (ICBO)
Other Names:
2SA1943N(S1ES)
Manufacturer:
Toshiba Semiconductor and Storage
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FAQs
Yes. We ship Toshiba Semiconductor and Storage 2SA1943N(S1,E,S) Internationally to many countries around the world.
You can order Toshiba Semiconductor and Storage brand products like Toshiba Semiconductor and Storage 2SA1943N(S1,E,S) directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1943N(S1,E,S). It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 15a. It features bipolar (bjt) transistor pnp 230v 15a 30mhz 150w through hole to-3p(n). Furthermore, 80 @ 1a, 5v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 30mhz. The product is available in through hole configuration. The 3v @ 800ma, 8a is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 25. to-3p(n) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 230v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 150w. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 5µa (icbo) is the maximum current at collector cutoff. Alternative Names include 2sa1943n(s1es). The toshiba semiconductor and storage's product offers user-desired applications.
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