This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC2713-GR,LF. It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 100ma. It features bipolar (bjt) transistor npn 120v 100ma 100mhz 150mw surface mount to-236. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 100mhz. The product is available in surface mount configuration. The 300mv @ 1ma, 10ma is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 1. to-236 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, cut tape (ct) is the available packaging type of the product. The product has 125°c (tj) operating temperature range. The maximum power of the product is 150mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include 2sc2713-grlfct
2sc2713-grte85lfct
2sc2713-grte85lfct-nd. The toshiba semiconductor and storage's product offers user-desired applications.
Reviews
Be the first
to
review.
Don’t hesitate to ask questions for
better
clarification.
Alternative products
Related products
FAQs
Yes. We ship Toshiba Semiconductor and Storage 2SC2713-GR,LF Internationally to many countries around the world.
You can order Toshiba Semiconductor and Storage brand products like Toshiba Semiconductor and Storage 2SC2713-GR,LF directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
Yes. You can also search 2SC2713-GR,LF on website for other similar products.
We accept all major payment methods for all products including ET11617254. Please check your shopping cart at the time of order.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Toshiba Semiconductor and Storage 2SC2713-GR,LF. You can also check on our website or by contacting our customer support team for further order details on Toshiba Semiconductor and Storage 2SC2713-GR,LF.
We use our internationally recognized delivery partners UPS/DHL. Collection of Toshiba Semiconductor and Storage 2SC2713-GR,LF can also be arranged by the customer for international shipments by contacting our customer support team. Also you can search on website "Toshiba Semiconductor and Storage" products or by using our unique Enrgtech manufacturing part number ET11617254.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SC2713-GR,LF. It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 100ma. It features bipolar (bjt) transistor npn 120v 100ma 100mhz 150mw surface mount to-236. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 100mhz. The product is available in surface mount configuration. The 300mv @ 1ma, 10ma is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 1. to-236 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, cut tape (ct) is the available packaging type of the product. The product has 125°c (tj) operating temperature range. The maximum power of the product is 150mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include 2sc2713-grlfct 2sc2713-grte85lfct 2sc2713-grte85lfct-nd. The toshiba semiconductor and storage's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.