2SA1163-GR,LF, Toshiba Semiconductor and Storage
Product Information
Manufacturer Standard Lead Time:
12 Weeks
Current - Collector (Ic) (Max):
100mA
Detailed Description:
Bipolar (BJT) Transistor PNP 120V 100mA 100MHz 150mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 6V
Transistor Type:
PNP
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Part Status:
Active
Standard Package:
1
Supplier Device Package:
S-Mini
Voltage - Collector Emitter Breakdown (Max):
120V
Packaging:
Cut Tape (CT)
Operating Temperature:
125°C (TJ)
Power - Max:
150mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector Cutoff (Max):
100nA (ICBO)
Other Names:
2SA1163-GR(TE85LFCT
2SA1163-GR(TE85LFCT-ND
2SA1163-GRLFCT
Manufacturer:
Toshiba Semiconductor and Storage
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FAQs
Yes. We ship Toshiba Semiconductor and Storage 2SA1163-GR,LF Internationally to many countries around the world.
You can order Toshiba Semiconductor and Storage brand products like Toshiba Semiconductor and Storage 2SA1163-GR,LF directly through our website or by contacting our Customer Support Team. Or call us at +44 (0) 3303 800 157 or write and email to our support team at sales@enrgtech.co.uk.
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1163-GR,LF. It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 100ma. It features bipolar (bjt) transistor pnp 120v 100ma 100mhz 150mw surface mount s-mini. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 100mhz. The product is available in surface mount configuration. The 300mv @ 1ma, 10ma is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 1. s-mini is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, cut tape (ct) is the available packaging type of the product. The product has 125°c (tj) operating temperature range. The maximum power of the product is 150mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include 2sa1163-gr(te85lfct 2sa1163-gr(te85lfct-nd 2sa1163-grlfct. The toshiba semiconductor and storage's product offers user-desired applications.
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