JANTXV2N3019S, Microsemi Corporation
Product Information
Current - Collector (Ic) (Max):
1A
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 500mA, 10V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Part Status:
Active
Series:
Military, MIL-PRF-19500/391
Standard Package:
1
Supplier Device Package:
TO-39
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
800mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
TO-205AD, TO-39-3 Metal Can
Current - Collector Cutoff (Max):
10nA
Other Names:
1086-3070
1086-3070-MIL
Manufacturer:
Microsemi Corporation
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTXV2N3019S. The maximum collector current includes 1a. It features bipolar (bjt) transistor npn 80v 1a 800mw through hole to-39. Furthermore, 50 @ 500ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 500mv @ 50ma, 500ma is the maximum Vce saturation. Furthermore, the product is active The product military, mil-prf-19500/391, is a highly preferred choice for users. It is available in the standard package of 1. to-39 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 800mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 10na is the maximum current at collector cutoff. Alternative Names include 1086-3070 1086-3070-mil. The microsemi corporation's product offers user-desired applications.
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