JANTX2N1613, Microsemi Corporation

Enrgtech Part No: ET12276816
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Manufacturer Part No:
JANTX2N1613
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Manufacturer: Microsemi Corporation

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Product Information

Current - Collector (Ic) (Max):

500mA

Detailed Description:

Bipolar (BJT) Transistor NPN 30V 500mA 800mW Through Hole TO-39

DC Current Gain (hFE) (Min) @ Ic, Vce:

40 @ 150mA, 10V

Transistor Type:

NPN

Mounting Type:

Through Hole

Vce Saturation (Max) @ Ib, Ic:

1.5V @ 15mA, 150mA

Part Status:

Discontinued at Digi-Key

Series:

Military, MIL-PRF-19500/181

Standard Package:

Supplier Device Package:

TO-39

Voltage - Collector Emitter Breakdown (Max):

30V

Packaging:

Bulk

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This is manufactured by Microsemi Corporation. The manufacturer part number is JANTX2N1613. The maximum collector current includes 500ma. It features bipolar (bjt) transistor npn 30v 500ma 800mw through hole to-39. Furthermore, 40 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 1.5v @ 15ma, 150ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key The product military, mil-prf-19500/181, is a highly preferred choice for users. It is available in the standard package of 1. to-39 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 800mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 10µa (icbo) is the maximum current at collector cutoff. Alternative Names include 1086-15488 1086-15488-mil. The microsemi corporation's product offers user-desired applications.

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