SI5513CDC-T1-E3, Vishay Siliconix
Product Information
FET Feature:
Logic Level Gate
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Detailed Description:
Mosfet Array N and P-Channel 20V 4A, 3.7A 3.1W Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:
285pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
4.2nC @ 5V
Mounting Type:
Surface Mount
Standard Package:
1
Part Status:
Active
Series:
TrenchFET®
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
55 mOhm @ 4.3A, 4.5V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power - Max:
3.1W
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4A, 3.7A
Other Names:
SI5513CDC-T1-E3CT
Manufacturer:
Vishay Siliconix
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI5513CDC-T1-E3. The FET features of the product include logic level gate. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. It features mosfet array n and p-channel 20v 4a, 3.7a 3.1w surface mount. The product's input capacitance at maximum includes 285pf @ 10v. The maximum gate charge and given voltages include 4.2nc @ 5v. The product is available in surface mount configuration. It is available in the standard package of 1. Furthermore, the product is active The product trenchfet®, is a highly preferred choice for users. Moreover, the product comes in [Package/ Case]. It has a maximum Rds On and voltage of 55 mohm @ 4.3a, 4.5v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. Its typical moisture sensitivity level is 1 (unlimited). The maximum power of the product is 3.1w. The product has a 20v drain to source voltage. The continuous current drain at 25°C is 4a, 3.7a. Alternative Names include si5513cdc-t1-e3ct. The vishay siliconix's product offers user-desired applications.
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